Semiconductor overvoltage suppressor with accurately determined

Details Semiconductor overvoltage suppressor with accurately determined Semiconductor overvoltage suppressor with accurately determined

1984-07-23

1986-12-23

Clawson, Jr., Joseph E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 38, 357 51, 357 86, 357 91, 361 56, 361 91, H01L 2990

Patent

active

046315616

ABSTRACT:
A semiconductor suppressor device consists of a structure including a P-type substrate, an N-type epitaxial layer, a first P-type diffusion region in the epitaxial layer, and a second N-type diffusion region in the first region. A first metallic layer which is in contact with the substrate and a second metallic region which is in contact with the first and the second regions form the terminals of the device. The epitaxial layer has at least one zone along the junction with the first region which has a higher concentration than the rest of the layer so that the conduction through a reverse-biased junction occurs in this zone. This enables the establishment of a highly accurate striking potential for the suppressor device.

REFERENCES:
patent: 3146135 (1964-08-01), Sah
patent: 3236698 (1966-02-01), Shockley
patent: 3651564 (1972-03-01), Glass
patent: 3739236 (1973-06-01), Lord
patent: 3774085 (1973-11-01), Platzoeder et al.
patent: 3958268 (1976-05-01), Kamel et al.
patent: 4321524 (1982-03-01), Petrovic
patent: 4511913 (1985-04-01), Nagano
D. Goldthorp et al. "An Int. Ckt. Composite PNPN Diode," 1979 IEDM, Wash. D.C., Conf. Proc. pp. 180-183.

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