MOMS tunnel emission transistor

Details MOMS tunnel emission transistor MOMS tunnel emission transistor

1984-12-19

1986-12-23

Edlow, Martin H.

357 4, 357 15, 357 56, H01L 4902

Patent

active

046315608

ABSTRACT:
An MOMS tunnel emission transistor is provided by a plurality of mesa stacked horizontal layers including at least one semiconductor layer (63) having an exposed edge (68) at a generally vertical side (67) of the mesa, such as the 111 plane. A first metal layer (66) has a generally vertical portion (72) extending along the side of the mesa and forming a schottky junction with the edge of the semiconductor layer. A generally vertical oxide layer (70) is on the first metal layer, and a second metal layer (71) is on the oxide. The MOMS tunnel emission transistor is formed by metal (71)--oxide (70)--metal (66)--semiconductor (63).

REFERENCES:
patent: 3356864 (1967-12-01), Geoever
patent: 3761785 (1973-09-01), Pruniaux
patent: 4127860 (1978-11-01), Beehtz
patent: 4137543 (1979-01-01), Beneking
patent: 4212022 (1980-07-01), Beneking
patent: 4466008 (1984-08-01), Beneking
patent: 4499656 (1985-02-01), Fabian

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