Encapsulation for high frequency semiconductor device

Details Encapsulation for high frequency semiconductor device Encapsulation for high frequency semiconductor device

1975-02-21

1976-08-10

Wojciechowicz, Edward J.

357 80, 357 74, H01L 3902, H01L 2302

Patent

active

039745180

ABSTRACT:
An hermetic sealed microwave diode package having high thermal conductivity and very low parasitic impedances. The diode chip is mounted upon a diamond member embedded in a copper base member so that the diamond mounting surface and the copper base member surface are coplanar. A fused silica insulator ring produced by selective grit blasting surrounds the chip and is mounted likewise entirely on the diamond surface. The silica insulator has a height comparable to the thickness of the semiconductor chip and the enclosure is completed by a metal covering member which includes a contact to the top surface of the diode chip. The package thereby has extremely short conductive paths and low capacitance by virtue of the very small silica insulator ring.

REFERENCES:
patent: 3515952 (1970-06-01), Robinson
patent: 3710202 (1973-01-01), Leidich et al.
Proceeding IEEE - 8/72 - pp. 1014-1015, "Embedded Diamond Heat Sinks . . . ".

Affiliated with

Also associated with

Rating

Encapsulation for high frequency semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Encapsulation for high frequency semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Encapsulation for high frequency semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1745381