Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1983-12-28

1986-07-15

Popek, Joseph A.

Static information storage and retrieval

Powering

365185, 365191, G11C 1140

Patent

active

046010203

ABSTRACT:
An EEPROM utilizing a tunneling electron for writing and/or erasing, has charge pump circuits for pumping charge onto selected column and row lines up to a high voltage. In each of the charge pump circuits, a transistor is provided for intercepting clock pulses applied to a capacitor in each of the charge pump circuits connected to unselected column and row lines.

REFERENCES:
patent: 4506350 (1985-03-01), Asano et al.
IBM Technical Disclosure Bulletin, vol. 23, No. 10, Mar. 1981, "Bit Line Selection Circuit for Programming Level Voltages in an Electrically Alterable Read-Only Storage", by P. C. Tien.

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