Method for forming SOI film

Fishing – trapping – and vermin destroying

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437 21, 437 24, 437 26, 437 83, 437973, 437 89, 148DIG85, 148DIG86, H01L 2176

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048747181

ABSTRACT:
According to the present invention, an SOI film of a monocrystalline silicon film is formed by making solid phase epitaxial growth of an amorphous silicon layer formed on an oxide film. A through hole portion formed in the oxide film is formed in such a shape that an epitaxial growth region growing with the through hole portion as a nucleus covers the entire region of the amorphous silicon layer. After the SOI film is formed, oxygen ions are ioin-implanted into the through hole portion in the oxide film, to be embedded by an oxide film layer by thermal processing.

REFERENCES:
patent: 4437225 (1984-03-01), Nhizutani
patent: 4463492 (1984-08-01), Nhaeguchi
patent: 4479297 (1984-10-01), Nhizutani
patent: 4559102 (1985-12-01), Hayafuji
patent: 4592799 (1986-06-01), Hayafuji
patent: 4749660 (1988-06-01), Short
patent: 4760036 (1988-07-01), Schubert
patent: 4775641 (1988-10-01), Duffy
patent: 4786608 (1988-11-01), Griffith
Japanese J. of Appl. Physics: "High Speed C-MOS IC using Buried SiO.sub.2 Layers Formed by Ion Implementation" by K. Izumi et al, vol. 19, Suppl. 19-1, pp. 151-154.
App. Phys. Lett.: "Enhancement of Lateral Solid Phase Epitaxial Growth in Evaporated Amorphose Si Films by Phosphorus Implantation", by H. Yamamoto et al., 46(3), Feb. 1, 1985, pp. 268-270.

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