Fishing – trapping – and vermin destroying
Patent
1988-07-28
1989-10-17
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 21, 437 24, 437 26, 437 83, 437973, 437 89, 148DIG85, 148DIG86, H01L 2176
Patent
active
048747181
ABSTRACT:
According to the present invention, an SOI film of a monocrystalline silicon film is formed by making solid phase epitaxial growth of an amorphous silicon layer formed on an oxide film. A through hole portion formed in the oxide film is formed in such a shape that an epitaxial growth region growing with the through hole portion as a nucleus covers the entire region of the amorphous silicon layer. After the SOI film is formed, oxygen ions are ioin-implanted into the through hole portion in the oxide film, to be embedded by an oxide film layer by thermal processing.
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Japanese J. of Appl. Physics: "High Speed C-MOS IC using Buried SiO.sub.2 Layers Formed by Ion Implementation" by K. Izumi et al, vol. 19, Suppl. 19-1, pp. 151-154.
App. Phys. Lett.: "Enhancement of Lateral Solid Phase Epitaxial Growth in Evaporated Amorphose Si Films by Phosphorus Implantation", by H. Yamamoto et al., 46(3), Feb. 1, 1985, pp. 268-270.
Gutierrez A.
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
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