Thin film capacitor and method

Details Thin film capacitor and method Thin film capacitor and method

1976-02-09

1977-01-11

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

29 2542, 29570, 204192, 204 56R, 204298, 317258, C25D 500, C23C 1500, H01G 700

Patent

active

040025420

ABSTRACT:
A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within a vacuum environment. A film of tantalum oxide is applied over the conductive film within the vacuum environment. The composite is then removed from the vacuum environment and disposed within an anodizing bath wherein an electrical current is passed through the tantalum oxide film, the current being substantially constant until a predetermined desired voltage is reached. Thereafter, a second electrically conductive film electrode is disposed over the so-formed tantalum oxide film.

REFERENCES:
patent: 2993266 (1961-07-01), Berry
patent: 3257305 (1966-06-01), Varga
patent: 3275915 (1966-07-01), Harendza-Harinxma
patent: 3544434 (1970-12-01), Giller et al.
patent: 3664931 (1972-05-01), Gerstenberg
patent: 3969197 (1976-07-01), Tolar et al.
P. Lloyd, "Thin-Film Capacitors Using Tantalum Oxide Dielectrics Prepared by Reactive Sputtering", Solid State Electronics, July 1961, pp. 74-75.

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