Photoconductive member having light receiving layer of A-(Si-Ge)

Details Photoconductive member having light receiving layer of A-(Si-Ge) Photoconductive member having light receiving layer of A-(Si-Ge)

1984-09-07

1986-07-15

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 60, 430 69, 430 84, 430 95, G03G 5082

Patent

active

046006710

ABSTRACT:
A photoconductive member comprises a substrate for the photoconductive member and a light receiving layer exhibiting photoconductivity provided on said substrate comprising an amorphous material containing silicon atoms and germanium atoms, the light receiving lager having a layer region (N) containing nitrogen atoms, and the layer region (N) having a region (X) in which the content C (N) of nitrogen atoms in the layer thickness direction smoothly and continuously increases toward the upper surface of the light receiving layer.

REFERENCES:
patent: 4451546 (1984-05-01), Kawamura et al.
patent: 4490450 (1984-12-01), Shimizu et al.
patent: 4491626 (1985-01-01), Kawamura et al.

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