Schottky barrier diode semiconductor structure and method

Details Schottky barrier diode semiconductor structure and method Schottky barrier diode semiconductor structure and method

1974-05-17

1976-02-17

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 357 15, 427 84, B01J 1700

Patent

active

039382435

ABSTRACT:
Schottky barrier diode semiconductor structure having a semiconductor body formed essentially of silicon and having a surface with an active device formed in the semiconductor body having collector, base and emitter regions and with at least two metals on said surface combining with the silicon to form an alloy of at least two metals and silicon which is in contact with the collector, base and emitter regions and also extends beyond the base region to form a Schottky barrier diode having a barrier height which is determined by the composition of the alloy.
In the method, the alloy of at least the two metals in combination with the silicon is adjusted to modify the barrier height of the Schottky barrier diode so that a barrier height can be chosen ranging from between 0.64 and 0.835.

REFERENCES:
patent: 3590471 (1971-07-01), Lepselter
patent: 3609472 (1971-09-01), Bailey
patent: 3616380 (1971-10-01), Lepselter
patent: 3623925 (1971-11-01), Jenkins
patent: 3699408 (1972-10-01), Shinoda

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