Variable capacitance device

Details Variable capacitance device Variable capacitance device

1982-07-12

1985-07-16

Larkins, William D.

357 20, 357 89, H01L 2993

Patent

active

045299951

ABSTRACT:
Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.

REFERENCES:
patent: 2989650 (1961-06-01), Doucette et al.
patent: 3201664 (1965-08-01), Adam
patent: 4449141 (1984-05-01), Sato et al.
patent: 4456917 (1984-06-01), Sato et al.

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