Semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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357 17, 357 60, 372 46, H01S 319

Patent

active

045035393

ABSTRACT:
A new laser structure having self-aligned junction stripe geometry grown by the MO CVD process is disclosed. The laser is grown on a groove-etched substrate and has a DH structure with a small V-shaped active region. A current path in the V-shaped region is formed using anomalous zinc diffusion during growth, which allows a broad area metal contact for both sides of the wafer.

REFERENCES:
patent: 4251298 (1981-02-01), Thompson
Mori et al., "V-DH Laser: A Laser with a V-Shaped Active Region Grown by Metalorganic C.V.D.", Electronics Letters, vol. 16, No. 20, Sep. 25, 1980, pp. 785-787.

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