Thin film transistor with excellent stability for liquid crystal

Details Thin film transistor with excellent stability for liquid crystal Thin film transistor with excellent stability for liquid crystal

1991-04-24

1994-02-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 66, 257 72, 257641, 359 59, H01L 2904, H01L 31036, H01L 2358

Patent

active

052890163

ABSTRACT:
The thin-film transistor for liquid crystal display according to the present invention has an inverted-staggered structure in which source and drain electrodes are formed above a gate electrode on a glass substrate, and comprises a nondoped amorphous silicon film as a channel region just above the gate electrode, and a borosilicate glass film formed on the amorphous silicon film. Preferably, the transistor further includes a silicon nitride film formed over the borosilicate glass film.

REFERENCES:
patent: 4821092 (1989-04-01), Noguchi
patent: 4834507 (1989-05-01), Kato et al.
patent: 4864376 (1989-09-01), Aoki et al.
patent: 4997262 (1991-03-01), Sakono et al.
patent: 5041888 (1991-08-01), Possin et al.
patent: 5076666 (1991-12-01), Katayama et al.
patent: 5103330 (1992-04-01), Fukami et al.
M. Sasuga et al, "10.4-In. Diagonal Multicolor Display Using Amorphous Silicon TFT-LCD", Symposium of Japan Display '89, pp. 510-513.
Y. Asai, "A 6.7-In. Square High-Resolution Full-Color TFT-LCD", Symposium of Japan Display '89, pp. 514-517.

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