Semiconductor device having a vertical quantum well via and meth

Details Semiconductor device having a vertical quantum well via and meth Semiconductor device having a vertical quantum well via and meth

1992-08-17

1994-02-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 24, 257183, H01L 29161, H01L 29205

Patent

active

052890147

ABSTRACT:
A semiconductor device having a vertical interconnect or via stacked formed by quantum well comprising a semiconductor material is provided. A first semiconductor device (11) having a current carrying region (19) is formed in a first horizontal plane. A second semiconductor device (12) having a current carrying region (29) is formed in a second horizontal plane. Each of the current carrying regions have a first quantized energy level that is substantially equal. A semiconductor via (31) couples the current carrying region (19) of the first semiconductor device (11) to the current carrying region (29) of the second device (12), wherein the semiconductor via (31) has a first quantized energy level capable of alignment with the quantized energy levels of the current carrying regions (19, 29) of the first and second semiconductor devices (11,12).

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Beresford et al., "Polytype Heterostructures For Electron Tunneling Devices", IEDM-89, pp. 547-550.
Ismail et al., "Patterning and Characterization of Large Area Quantum Wire Arrays", Appl. Phys. Lett. 58, #14, 8 Apr. 1991, pp. 1539-1544.

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