Process for forming a T-shaped gate structure

Details Process for forming a T-shaped gate structure Process for forming a T-shaped gate structure

Filed on

1985-01-30

Date issued

1986-07-15

Examiner

Hearn, Brian E.

Patent Class

Metal working

SubClass

Method of mechanical manufacture

SubSubClass

Assembling or joining

Other Related Categories

29579, 29591, 357 15, 357 22, 148DIG143, H01L 21285

Type

Patent

Status

active

Patent number

045997900

Description

ABSTRACT:
Using the present invention, a gate for a MESFET may be fabricated having a minimum gate length while having a low resistance gate. In addition, the present invention provides a method for forming a gate and gate recess which are perfectly aligned which is the optimal structure for high frequency power MESFETs. A two layer masking layer is fabricated having a first layer which may be etched uniformly and a second layer of lithographic material which may be photolithographic material such as AZ resist. A gate opening is patterned in the photoresist material and a metal such as gold is deposited by evaporation from acute angles on opposite sides of the gate opening in the resist. The deposited metal serves as a mask which covers all but a very small portion of the opening in the photoresist. The silicon nitride layer is then etched to form a gate opening and gate recess. Gate contact metal is then deposited in the opening thus formed and the nitride, photoresist and gold layers are removed, lifting off a portion of the gate metal layer thus leaving a T-shaped gate which provides a minimum length at the channel gate interface and provides a low gate resistance.

REFERENCES:
patent: 4536942 (1985-08-01), Chao et al.
patent: 4551905 (1985-11-01), Chao et al.

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