Heterojunction photo-detector with transparent gate

Details Heterojunction photo-detector with transparent gate Heterojunction photo-detector with transparent gate

1988-09-14

1989-05-23

James, Andrew J.

357 30, 357 58, 357 16, H01L 2980

Patent

active

048335126

ABSTRACT:
A photo-detector in the form of an optical field effect transistor comprig a semi-insulating InP substrate (1), a p.sup.+InP gate region ( 2) an n.sup.- InGaAs channel region (3) and source and drain contacts (5,6). Light incident on the bottom face of the substrate is detected. The channel region is thicker and reduced in doping in comparison with a normal JFET in order to achieve efficient light absorption and low gate to source capacitance. The source and drain contacts are interdigitated to increase the area for optical absorption (FIG. 1). Alternatively, (FIG. 2), the channel region is a composite structure including a lowly doped layer (11) for directing photogenerated carriers to a more highly doped layer (12) (active channel layer) of reduced dimensions of reduced area and upon which strip-like source and drain contacts (9,10) are disposed. The optical FET structures proposed facilitate integration with other circuit elements.

REFERENCES:
patent: 2114591 (1938-04-01), Clark
patent: 2985805 (1961-05-01), Nelson
patent: 4517581 (1985-05-01), Thompson
patent: 4625226 (1986-11-01), Antell
patent: 4636829 (1987-01-01), Greenwood et al.
patent: 4638344 (1987-01-01), Cardwell, Jr.

Affiliated with

Also associated with

Rating

Heterojunction photo-detector with transparent gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction photo-detector with transparent gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction photo-detector with transparent gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1733825