Method of correcting mask pattern and mask, method of exposure,

Details Method of correcting mask pattern and mask, method of exposure, Method of correcting mask pattern and mask, method of exposure,

1998-12-17

2000-11-28

Couso, Jose L.

Image analysis

Applications

Manufacturing or product inspection

382145, 382151, G06K 900

Patent

active

061545635

ABSTRACT:
A method of correcting a mask pattern wherein the mask pattern of a photomask used in a photolithography process is made to deform so as to give a transfer image close to a desired design pattern. The method including: an evaluation point arranging step for arranging a plurality of evaluation points along the outer periphery of the desired design pattern, a simulation step for simulating a transfer image obtained at exposure under predetermined transfer conditions using a photomask of a design pattern with evaluation points, a comparison step for comparing for each evaluation point the difference between the simulated transfer image and the design pattern, and a deformation step for deforming the design pattern in accordance with the differences compared for each evaluation point so that the differences become smaller. In the evaluation point arranging step, for example, the evaluation points are arranged at the corners of the desired design pattern and arranging the evaluation points at predetermined intervals at the sides of the pattern.

REFERENCES:
patent: 5008702 (1991-04-01), Tanaka et al.
patent: 5442418 (1995-08-01), Murakami et al.
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5736280 (1998-04-01), Tsudaka
patent: 6014456 (2000-01-01), Tsudaka

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