Semiconductor device having reduced capacitance and method of fa

Details Semiconductor device having reduced capacitance and method of fa Semiconductor device having reduced capacitance and method of fa

1980-10-28

1983-09-13

Larkins, William D.

357 41, 357 52, 357 59, H01L 2978, H01L 2904, H01L 2934

Patent

active

044045794

ABSTRACT:
A spacer region is provided between the channel stop region and the adjacent portion of the active region of a semiconductor device to reduce the capacitance therebetween. The spacer region may be formed by allowing at least a portion of a conductive line formed on the surface of the device to overlap the active region adjacent the channel stop region.

REFERENCES:
patent: 3755001 (1973-08-01), Kooi
patent: 4287661 (1981-09-01), Stoffel
patent: 4370669 (1983-01-01), Donley
Tasch, Jr., et al, IEEE Trans. on Electron Devices, vol. ED 23, No. 2, Feb. 1976, pp. 126-131.

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