Semiconductor device

Details Semiconductor device Semiconductor device

1982-05-03

1983-09-13

Sikes, William L.

357 13, 357 20, 357 55, 357 57, H01L 2972, H01L 2980

Patent

active

044045751

ABSTRACT:
A semiconductor device which, due to a feedback current flowing through a resistance present between the gate region and a primary current path channel region, exhibits a very steeply rising drain current versus voltage characteristic and has a very small resistance during conduction.

REFERENCES:
patent: 4198648 (1980-04-01), Nishizawa
patent: 4284997 (1978-06-01), Nishizawa
patent: 4338618 (1982-07-01), Nishizawa

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