Tungsten-silicide reoxidation process including annealing in pur

Details Tungsten-silicide reoxidation process including annealing in pur Tungsten-silicide reoxidation process including annealing in pur

1988-01-07

1989-05-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437239, 437200, 437983, 437949, 148DIG3, 148DIG147, 148DIG118, H01L 21316

Patent

active

048330990

ABSTRACT:
A tungsten silicide reoxidation technique for forming a reoxidation layer in a CMOS device is disclosed. After forming an insulated gate member, which has a silicon-rich tungsten silicide layer overlying a polysilicon layer, it is first oxidized and the oxide is removed to expose WSi for forming a particular source/drain doped device. Then it is annealed in a substantially pure nitrogen ambient for a given time period. A subsequent growth of the reoxidation layer over the gate member by introducing oxygen results in a substantially planarized surface. The combination between tungsten and oxygen is prevented.

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M. Y. Tsai et al., "One-Micron Polycide (WSi on POLY-Si) MOSFET Technology"; J. Electrochem. Soc.: Solid-State Science and Technology; Oct. 1981; pp. 2207-2214.
S. Zirinsky et al., "Oxidation Mechanisms in WSi.sub.2 Thin Films"; Appl. Phys. Lett. 33(1); Jul. 1, 1978; pp. 76-78.
F. Mohammadi et al., "Kinetics of the Thermal Oxidation of WSi.sub.2 "; Appl. Phys. Lett., vol. 35, No. 7; Oct. 1, 1979; pp. 530-531.
M. Ayukawa et al., "CVD WSix Oxidation Characteristics with Ion Implantation Method"; V-MIC Conf.; Jun. 15-16, 1978; pp. 314-320.

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