Heterojunction field effect transistor having a InAlAs Schottky

Details Heterojunction field effect transistor having a InAlAs Schottky Heterojunction field effect transistor having a InAlAs Schottky

1997-03-28

1998-06-16

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, 257200, 257 12, H01L 310304

Patent

active

057675392

ABSTRACT:
A field effect transistor includes an undoped semiconductor layer formed on a semi-insulating InP substrate and lattice-matched with at least the semi-insulating InP substrate, a channel layer formed on the undoped semiconductor layer and consisting of a semiconductor layer having a larger electron affinity than that of the undoped semiconductor layer, a donor supply layer formed on the channel layer and consisting of an impurity-doped semiconductor layer having a smaller electron affinity than that of the channel layer, and a Schottky gate formation layer consisting of an undoped semiconductor layer formed on the donor supply layer. The donor supply layer consists of impurity-doped InP, and the Schottky gate formation layer consists of InAlAs.

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