Surface acoustic wave device

Details Surface acoustic wave device Surface acoustic wave device

1992-06-22

1993-08-10

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310313R, H01L 4108

Patent

active

052352331

ABSTRACT:
IDT electrodes (4) are provided in a two-layer structure of a diamond crystal (2) in an AlN thin film (3) so that a third Rayleigh wave or a Sezawa wave propagates in the two-layer structure. Or else, a third Rayleigh wave propagates in a substrate of a three-layer structure wherein a SiO.sub.2 film is provided between a diamond crystal (2) or an AlN thin film (3). SAW devices which have high electromechanical coupling coefficients and high phase velocities are obtained based on those structures. A SAW device in which a third Rayleigh wave propagates is suitable for a narrowband timing tank filter or bandpass filter which is used in a microwave region of several GHz to 20 GHz. A SAW device in which a Sezawa wave propagates is suitable for a wideband voltage-controlled oscillator or a wide bandpass filter which is used in a wide frequency range from the VHF-band to the UHF-band.

REFERENCES:
patent: 4511816 (1985-04-01), Mikoshiba et al.
patent: 4516049 (1985-05-01), Mikoshiba et al.
patent: 4567393 (1986-01-01), Asai et al.
patent: 4571519 (1986-02-01), Kawabata et al.
patent: 4752709 (1988-06-01), Fujishima et al.
patent: 4952832 (1990-08-01), Imai et al.

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