Transfer region design for charge-coupled device image sensor

Details Transfer region design for charge-coupled device image sensor Transfer region design for charge-coupled device image sensor

1992-07-24

1993-08-10

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257230, 257234, 257249, H01L 2978, H01L 2714, H01L 3100

Patent

active

052351963

ABSTRACT:
The present invention is directed to an image sensor which comprises a body of a semiconductor material having therein a plurality of photodetectors arranged in a line and a CCD shift register extending along the line of photodetectors adjacent to but spaced from an edge of the photodetectors. The CCD shift register includes a channel region and a plurality of first and second gate electrodes extending over and insulated from the channel region. One of each of the first and second gate electrodes extends across a portion of the edge of each photodetector. Each of the first electrodes has an arm extending along the entire edge of its respective photodetector between the photodetector and the second gate electrode. A separate transfer region is in the body between the edge of each photodetector and its respective first electrode and extends along the entire edge of the photodetector. A transfer gate is over and insulated from the transfer regions.

REFERENCES:
patent: 4528594 (1985-07-01), Kadekodi et al.
patent: 4613402 (1986-09-01), Losee et al.
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4975977 (1990-12-01), Lee et al.
patent: 5060245 (1991-10-01), Nelson
Burkey et al "The Pinned Photodiode for an Interline-Transfer CCD Image Sensor", Proceedings IEEE IEDM, vol. 84, pp. 28-31, Dec. 1984.

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