MISFET switching circuit for a high withstand voltage

Details MISFET switching circuit for a high withstand voltage MISFET switching circuit for a high withstand voltage

1975-11-21

1976-11-09

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307205, 307214, 340324R, 340343, H03K 1908, H03K 1940, H05B 3900

Patent

active

039913260

ABSTRACT:
A switching circuit for use as, e.g., a digitron driver circuit in an electronic desk top calculator, comprises a driving MISFET whose source terminal is connected to a ground reference potential, at least one protective MISFET whose source terminal is connected to a drain terminal of the driving MISFET, and a bias power source which is connected through a load to a drain terminal of the protective MISFET. A d.c. voltage is applied to a gate terminal of the protective MISFET and an output signal is derived from the drain terminal of the protective MISFET on the basis of an input signal which is supplied to a gate terminal of the driving MISFET. The driving MISFET is an enhancement mode transistor, while the protective MISFET is a depletion mode transistor, whereby the withstand voltage of the switching circuit is enhanced.

REFERENCES:
patent: 3723749 (1973-03-01), Shapiro
patent: 3851185 (1974-11-01), Hatsukano et al.
patent: 3867646 (1975-02-01), McCoy
patent: 3896430 (1975-07-01), Hatsukano

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