Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-11-18
1985-03-05
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 148 15, 148175, 148187, 357 65, 357 91, H01L 21265, H01L 700
Patent
active
045022062
ABSTRACT:
The contact resistance between a layer of conductive material, such as a metal or conductive polycrystalline silicon, and either a body of single crystalline silicon or another layer of the conductive material is reduced by implanting ions of a neutral material through the conductive layer into either the silicon body or the other conductive layer. After the implantation of the neutral ions, the device is annealed.
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T. J. Faith et al., "Contact Resistance: Al and Al-Si to Diffused N.sup.+ and P.sup.+ Silicon", J. Vac. Sci. Technol. Al (2), Apr.-Jun. 1983, 443-448.
Schnable George L.
Wu Chung P.
Cohen Donald S.
Morris Birgit E.
RCA Corporation
Roy Upendra
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