Semiconductor integrated circuit device and fabrication method t

Details Semiconductor integrated circuit device and fabrication method t Semiconductor integrated circuit device and fabrication method t

1981-12-01

1985-03-05

Smith, John D.

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 29576W, 427 93, 156653, 156657, H01L 2176

Patent

active

045022011

ABSTRACT:
The invention discloses a semiconductor integrated circuit device characterized in that an inverse transistor element portion and a normal transistor element portion are formed in a common semiconductor layer and are separated from each other by an oxide layer penetrating said semiconductor layer in the direction of its thickness. In particular, in order to attain improved characteristics for the respective devices, the semiconductor layer of the inverse transistor element portion is thinner than the semiconductor layer of the normal transistor element portion.

REFERENCES:
patent: 3962717 (1976-06-01), O'Brien
patent: 4157268 (1979-06-01), Bergeron

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