Method of manufacturing silicon nitride film

Details Method of manufacturing silicon nitride film Method of manufacturing silicon nitride film

1991-06-26

1993-08-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437243, 148DIG14, H01L 2102

Patent

active

052348695

ABSTRACT:
According to this invention, there is disclosed a method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, including the steps of setting a plurality of semiconductor wafers in a boat in a reaction furnace, increasing a temperature in the reaction tube to a predetermined temperature and decreasing a pressure in the reaction tube to a predetermined pressure, and supplying Si(N(CH.sub.3).sub.2).sub.4 gas from a first gas source to the reaction tube and supplying NH.sub.3 gas from a second gas source to the reaction tube.

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Roenigk, K. F., et al., "Low Pressure CVD of Silicon Nitride," Journal of the Electrochemical Society, No. 7, Jul. 1987, pp. 1777-1785.
Rosler, R. S., et al., "Plasma Enhanced CVD in a Novel LPCVD-Type System," Extended Abstracts, vol. 80-1, May 1980, p. 249.
European Search Report, App. No. EP 91 11 0256 completed Feb. 26, 1992 by Examiner G. O. Zollfrank at The Hague.

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