Method of manufacturing doped contacts to semiconductor devices

Details Method of manufacturing doped contacts to semiconductor devices Method of manufacturing doped contacts to semiconductor devices

1991-12-10

1993-08-10

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, H01L 21283

Patent

active

052348636

ABSTRACT:
The present invention relates to a method of forming contacts in contact holes used in the semiconductor devices. The object of the present invention is to flatten the contacts to contact holes of a size smaller than 1 .mu.m in order to decrease the contact resistance in the contact holes. After a contact hole is formed on an P.sup.+ diffused layer, a polycrystalline (or amorphous) silicon film containing P-type impurities is formed by a chemical vapor-phase deposition method to fill the contact hole. Then, the contact hole only is filled with the polycrystalline silicon film by an etch-back method. Contact to an N.sup.+ diffused layer is subsequently formed in the same manner using a silicon film containing N-type impurities, followed by an upper wiring. Since polycrystalline silicon film is formed by the vapor-phase deposition method maintaining good step-covering property, the contact hole is sufficiently filled. The polycrystalline silicon film containing impurities in a high concentration makes it possible to lower the contact resistance in the contact holes.

REFERENCES:
patent: 4433468 (1984-02-01), Kawamata
patent: 4463491 (1984-08-01), Goldman et al.
patent: 4714686 (1987-12-01), Sander et al.
patent: 4727045 (1988-02-01), Cheung et al.
Wolf, S., et al., Silicon Processing, 1986, Lattice Press, vol. 1, pp. 175-182.

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