Stacked comb spacer capacitor

Details Stacked comb spacer capacitor Stacked comb spacer capacitor

1990-12-21

1993-08-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437235, 437919, H01L 2170, H01L 21265

Patent

active

052348555

ABSTRACT:
A stacked comb spacer capacitor (SCSC) using a modified stacked capacitor storage cell fabrication process. The SCSC is made up of polysilicon structure, having a spiked v-shaped (or comb-shaped) cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The creation of the spiked polysilicon structure increases storage capability 50% without enlarging the surface area defined for a normal buried digit line stacked capacitor cell. Removing the dielectric residing under the backside of the storage node cell plate and filling that area with polysilicon increases storage capacity by an additional 50% or more.

REFERENCES:
patent: 5030585 (1991-07-01), Gonzalez et al.
patent: 5049957 (1991-09-01), Inoue et al.
patent: 5071781 (1991-12-01), Seo et al.
patent: 5100825 (1992-03-01), Fazan et al.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs." by T. Ema, et al., pp. 592-595, 1988.
"A Spread Stacked Capacitor (SSC) Cell for 64MBIT DRAMs" by S. Inoue et al. pp. 31-34, IEDM 89'1989.

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