Method of producing a high voltage MOS transistor

Details Method of producing a high voltage MOS transistor Method of producing a high voltage MOS transistor

1992-05-28

1993-08-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437 30, 437 52, 148DIG109, H01L 21265

Patent

active

052348539

ABSTRACT:
A high voltage MOS transistor includes a semiconductor substrate (1) of a first semiconductor type, a gate electrode (14) formed on the semiconductor substrate via a gate oxide layer (13), first and second diffusion regions (15, 16) formed in the semiconductor substrate on both sides of the gate electrode and being of a second semiconductor type opposite to the first semiconductor type, and an electrode (38) which is directly connected to the first diffusion region (15) and is made up of a conductor layer (49) including polysilicon. An impurity concentration of the conductor layer (49) including the polysilicon is higher than an impurity concentration of the first diffusion region (15).

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patent: 5071784 (1991-12-01), Takeuchi et al.
patent: 5075249 (1991-12-01), Sato et al.
patent: 5116776 (1992-05-01), Chan et al.

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