Small cell, low contact assistance rugged power field effect dev

Fishing – trapping – and vermin destroying

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437 49, 257 24, H01L 21265

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active

052348512

ABSTRACT:
A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.

REFERENCES:
patent: 4714951 (1987-12-01), Baudrant et al.
patent: 4725872 (1988-02-01), Blouke et al.
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 4857983 (1989-08-01), Baliga et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4883767 (1989-11-01), Gray et al.
patent: 4972240 (1990-11-01), Murakami et al.
patent: 4985740 (1991-01-01), Shenai et al.
patent: 4998151 (1991-03-01), Korman et al.
patent: 5021353 (1991-06-01), Lowrey et al.
patent: 5030582 (1991-07-01), Miyajima et al.
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5098855 (1992-03-01), Komori et al.
F. Sequeda, "The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication", Journal of Metals, Nov. 1985, pp. 54-59.
C. Y. Ting, "Silicide for Contacts and Interconnects", IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., IEDM, 1984, pp. 110-113.
C. J. Kircher et al., "Interconnection Method for Integrated Circuits", IBM Technical Disclosure Bulletin, vol. 13, No. 2, Jul. 1970, p. 436.

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