Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-02-18

2000-11-28

Zarabian, Amir

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, 438160, 438166, H01L 2100

Patent

active

061534455

ABSTRACT:
A catalyst element for accelerating crystallization is added to an amorphous silicon film containing an impurity element for threshold voltage control, and a heat treatment is then performed to obtain a crystalline silicon film. Thereafter, the catalyst element is gettered by performing a heat treatment in an atmosphere containing a halogen element. In this step, a chemical equilibrium state is established for the impurity element for threshold voltage control by mixing a compound gas containing the impurity element into the atmosphere, thereby preventing the impurity element from escaping into the vapor phase.

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