Process for producing a semiconductor device

Details Process for producing a semiconductor device Process for producing a semiconductor device

1982-02-10

1983-09-13

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 148 15, 148191, H01L 2174

Patent

active

044034008

ABSTRACT:
In a process for producing a semiconductor device, buried regions are formed within the semiconductor substrate by introducing an impurity, an epitaxial layer is formed on the buried regions, and an energy beam is selectively irradiated on the surface of the epitaxial layer.

REFERENCES:
patent: 4170501 (1979-10-01), Khajezadeh
Joshi, M. L., et al., "Masking Technique for Laser Induced Diffusion", in IBM-TDB, vol. 13, No. 4, Sep. 1970, p. 928.

Affiliated with

Also associated with

Rating

Process for producing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724097