1989-01-13
1990-07-10
Hille, Rolf
357 2, H01L 2354, H01L 2144
Patent
active
049410326
ABSTRACT:
A semiconductor device comprising an amorphous semiconductor which might contain microcrystal therein, and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component; wherein at least one element selected from the group consisting of (i)Ag, (ii)Au, (iii)Ca, Mg, Mn, W, Cr or Cu, (iv)Zn or Ge, and (v)Fe, Mo, Ni, Pd, Pt, Ti, V or Zr is added, as an additional component of the metal electrode, to the first component. According the present invention, there can be prevented the diffusion of an element of a metal electrode into a semiconductor layer during the production and the use of a semiconductor device. Thereby, the degradation of properties of the semiconductor device can be substantially prevented. Further, the yield of products can be improved and the lifetime of products can be greatly lengthened.
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d'Heurle et al.--"Long-Life Aluminum Alloy Thin-Film Conductors"--IBM Technical Disclosure Bulletin--vol. 15, No. 1--6-1972--pp. 348-349.
Kobayashi Kenji
Kondo Masataka
Tawada Yoshihisa
Tsuge Kazunori
Clark S. V.
Hille Rolf
Kanegafuchi Kagaku Kogyo & Kabushiki Kaisha
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