High voltage MOS structure

Details High voltage MOS structure High voltage MOS structure

1989-02-27

1990-07-10

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 234, 357 20, 357 52, 357 48, 357 53, 307304, H01L 1100

Patent

active

049410270

ABSTRACT:
The threshold of a double diffused insulated gate field effect transistor is determined by selectively positioning the source in the decreasing impurity concentration region of the body to set the peak impurity concentration in the channel region for the desired threshold voltage without modification of the process.

REFERENCES:
patent: 3845495 (1974-10-01), Cauge et al.
patent: 3909320 (1975-09-01), Gauge et al.
patent: 4099998 (1978-07-01), Ferro et al.
"Threshold Voltage Controllability in Double-Diffused-MOS Transistors", Pocha et al., IEEE Transactions on Electronic Devices; vol ED-21, 1978, pp. 778-784.

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