Method of manufacturing amorphous silicon electrophotographic ph

Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430128, G03G 5082

Patent

active

057668116

ABSTRACT:
A method for stably manufacturing, with improved reproducibility, a good amorphous silicon electrophotographic photosensitive member improved in potential characteristics such as chargeability and photo-response as well as in the effect of reducing photo-memory and defects which cause spot image defects. A film is formed by plasma CVD on a base of the photosensitive member by using electromagnetic waves having a frequency of 13.56 MHz or higher as power for forming plasma under conditions that the spatial potential of plasma generated by the electromagnetic waves with respect to a base of the photosensitive member is not higher than 120 V and the current density of ions incident upon the base is not lower than 0.4 mA/cm.sup.2.

REFERENCES:
patent: 4471042 (1984-09-01), Komatsu et al.
patent: 4664937 (1987-05-01), Ovshinsky et al.
patent: 5187115 (1993-02-01), Coleman
patent: 5190838 (1993-03-01), Saitoh et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5439715 (1995-08-01), Okamura et al.
"Glow Discharge Processs" by Brian Chapman, pp. 168-169, John Wiley & Sons.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing amorphous silicon electrophotographic ph does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing amorphous silicon electrophotographic ph, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing amorphous silicon electrophotographic ph will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1723542

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.