Method of producing a semiconductor device having a fin type cap

Details Method of producing a semiconductor device having a fin type cap Method of producing a semiconductor device having a fin type cap

1995-03-27

1997-05-20

Tsai, Jey

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438739, H01L 2170, H01L 2700

Patent

active

056311842

ABSTRACT:
A semiconductor device is made up of a substrate having a top surface, and a fin type capacitor having a first electrode including a first part which extends upwards from the substrate and a second part which extends approximately parallel to the top surface of the substrate from the first part. The second part is made up of at least one conductor layer.

REFERENCES:
patent: 4801560 (1989-01-01), Wood
patent: 4839311 (1989-06-01), Riley et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5196365 (1993-03-01), Gotou
patent: 5223729 (1993-06-01), Kudoh et al.
patent: 5250457 (1993-10-01), Dennison
patent: 5292677 (1994-03-01), Dennison
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS", EMA et al, IEDM Technical Digest, 1988, pp. 592-595.
"A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts", Itabashi et al, IEDM Technical Digest, 1991, pp. 477-480.

Affiliated with

Also associated with

Rating

Method of producing a semiconductor device having a fin type cap does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a semiconductor device having a fin type cap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a semiconductor device having a fin type cap will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1723530