Method of making a monolithic diode array

Details Method of making a monolithic diode array Method of making a monolithic diode array

1995-06-07

1997-05-20

Wilczewski, Mary

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

438128, 438621, H01L 2170, H01L 2700, H01L 2160, H01L 2348

Patent

active

056311818

ABSTRACT:
A semiconductor component is formed in a semiconductor wafer, of a first conductivity type. The semiconductor component includes a plurality of first regions, of a second conductivity type, in a top surface of the wafer and coated with a first metallization layer. The semiconductor component further includes a second region, of the second conductivity type, and a third region, of the first conductivity type, each formed in the top surface of the wafer. A second metallization layer coats the second and third regions. A fourth region, of the first conductivity type, is formed in a bottom surface of the semiconductor wafer and opposes the first and second regions. A fifth region, of the second conductivity type, is also formed in the bottom surface and opposes the third region. A rear surface metallization covers the bottom surface of the semiconductor wafer.

REFERENCES:
patent: 3435514 (1969-04-01), Dean
patent: 3913216 (1975-10-01), Ballonoff
patent: 5278101 (1994-01-01), Ikenoue
French Search Report from French Patent Application 93 04586, filed Apr. 13, 1993.

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