Method of optical lithography using phase shift masking

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430311, G03F 900

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active

057668060

ABSTRACT:
A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gate pattern with the active gate pattern and which divides the Intersection into categories of stacks where a slightly different phase assignment rules is employed for the different stacks.

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T. Waas et al., Automatic Generation of Phase Shift Mask Layouts, Microelectronic Engineering 23 (Mar. 1994) pp. 139-142, Elsevier Science B.V.
K. Ooi et al., Computer Aided Design Software for Designing Phase-Shifting Masks, Jpn. J. Appl. Phys., vol. 32 (Jul. 1993), Pt. 1, No. 12B, Dec. 1993, pp. 5887-5891.
A. Moniwa et al., Algorithm For Phase-Shifting Mask Design with Priority on Shifter Placement, Jpn. J. Appl. Phys., vol. 32 (Jul. 1993), Pt. 1, No. 12B, pp. 5871-5879.
H. Jinbo et al., 0.2 .mu.m Or Less i-Line Lithography by Phase-Shifting-Mask Technology, 1990 International Electron Devices Meeting Technical Digest, Dec. 9-12, 1990, pp. 004-007.

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