Spin-valve type thin film element

Details Spin-valve type thin film element Spin-valve type thin film element

1998-09-17

2000-11-28

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428694T, 428694TS, 428694R, 428900, 360113, 324252, G11B 566

Patent

active

06153319&

ABSTRACT:
Magnetization of the free magnetic layer can be induced along the X-direction (the track direction) shown in the drawing due to the inverse magnetostriction effect even when a tensile stress is applied along the Y-direction (the height direction) of the free magnetic layer 4 shown in the drawing, because the saturation magnetostriction constant .lambda.s of the free magnetic layer 4 is adjusted to within the range of -2.times.10.sup.-6 .ltoreq..lambda.s.ltoreq.0, more preferably -1.times.10.sup.-6 .ltoreq..lambda.s.ltoreq.0, thereby allowing magnetization of the free magnetic layer to be favorably reversed to approach asymmetry to zero (improve asymmetry).

REFERENCES:
patent: 5159513 (1992-10-01), Dieny
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5373238 (1994-12-01), McGuire et al.

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