Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1987-02-02

1989-05-23

Nguyen, Nam X.

Coating apparatus

Gas or vapor deposition

With treating means

118720, 118 501, 204164, C23C 1600

Patent

active

048319635

ABSTRACT:
A plasma processing apparatus which is effective for surface processing uses a reactive gas activated by plasma excited by microwave energy. Generation and maintaining of the plasma excited by the microwave energy are different where pressure in the gas chamber is above 0.1 Torr. Generating a high density plasma and maintaining the plasma includes the use of a protrudent window which extends into the activating chamber which also operates as a cavity resonator. Oxidation of resist formed on the surface of VLSI may be provided and damage by charge particles prevented by use of a magnetic field.

REFERENCES:
patent: 4101411 (1978-07-01), Suzuki et al.
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4450031 (1984-05-01), Ono et al.
patent: 4559100 (1985-12-01), Ninomiya et al.
patent: 4585541 (1986-04-01), Miyake et al.

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