Mask for manufacturing semiconductor device and method of manufa

Details Mask for manufacturing semiconductor device and method of manufa Mask for manufacturing semiconductor device and method of manufa

1995-05-25

1997-05-20

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430269, 430311, 430396, G03F 900

Patent

active

056311087

ABSTRACT:
The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180.degree. is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto

Affiliated with

Also associated with

Rating

Mask for manufacturing semiconductor device and method of manufa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask for manufacturing semiconductor device and method of manufa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for manufacturing semiconductor device and method of manufa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1722896