Complementary transistor structure having two epitaxial layers a

Details Complementary transistor structure having two epitaxial layers a Complementary transistor structure having two epitaxial layers a

1975-12-24

1977-11-15

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 44, 357 55, 357 56, 307315, H01L 2702, H01L 2710, H01L 2906

Patent

active

040588254

ABSTRACT:
A monolithic semiconductor device comprising at least two complementary transistors, in which the base zone of a first transistor and the collector zone of a second transistor are provided in a first epitaxial layer, while the emitter zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor are provided in a second epitaxial layer. A separation groove is provided between the transistors in the second epitaxial layer.

REFERENCES:
patent: 3624454 (1971-11-01), Adkinson
patent: 3751726 (1973-08-01), Einthoven et al.
patent: 3755722 (1973-08-01), Harland et al.
patent: 3836996 (1974-09-01), Schilp et al.
patent: 3836997 (1974-09-01), Einthoven et al.
patent: 3836997 (1974-09-01), Schilp
patent: 3898483 (1975-08-01), Sander et al.
patent: 3904450 (1975-09-01), Evans
patent: 3959039 (1976-05-01), Bonis et al.

Affiliated with

Also associated with

Rating

Complementary transistor structure having two epitaxial layers a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Complementary transistor structure having two epitaxial layers a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary transistor structure having two epitaxial layers a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1722779