Semiconducting metal silicide radiation detectors

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

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25037012, H01L 3102

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active

049408984

ABSTRACT:
Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.

REFERENCES:
patent: 4782377 (1988-11-01), Mahan
T. Siegrist, F. Hulliger and G. Travaglini; The Crystal Structure and Some Properties of ReSi.sub.2 ; Journal of the Less-Common Metals, 92, 1983. pp. 119-129.
Bijan K. Bhattacharyya, D. M. Bylander, and Leonard Kleinman; Fully Relativistic Energy Bands and Cohesive Energy of ReSi.sub.2 ; Phys. Rev., 33(6), 03/15/86; pp. 3947-3951.
V. S. Neshpor and G. V. Samsonov; Electron Structure, Chemical Bonding and Physical Properties of Rhenium Disilicide and Some of its Alloys; Jan. 25, 1965; pp. 599-605, Inorganic Materials, 1.
I. M. Chapnik; Atomic-Volume Deviations in Transition Metal Silicides and the Electrical Properties of Rhenium Disilicide; pp. K193-K198, phys. stat. sol. (a), 58, 1980.

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