Method of making monolithic integrated III-V type laser devices

Details Method of making monolithic integrated III-V type laser devices Method of making monolithic integrated III-V type laser devices

1989-03-17

1990-07-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG72, 148DIG95, 156645, 156662, 357 17, 372 50, 437 89, 437129, H01L 2120, H01L 21203

Patent

active

049406728

ABSTRACT:
A monolithic integrated structure in which a compound semiconductor (III-V or II-VI material) optoelectronic device (laser) is formed in the shape of a mesa-like structure projecting from an etch pit in an Si substrate. A method for sonically removing cantilevered beams formed on said optoelectronic device, to provide laser end facets, is also described.

REFERENCES:
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4608696 (1986-08-01), Law et al.
patent: 4719498 (1988-01-01), Wada et al.
patent: 4764246 (1988-08-01), Bridges et al.
patent: 4769342 (1988-09-01), Yagi et al.
patent: 4774205 (1988-09-01), Choi et al.
patent: 4777148 (1988-10-01), Liau et al.
patent: 4777516 (1988-10-01), Deschler et al.
patent: 4826784 (1989-05-01), Salerno et al.
Ghash et al., "Monolithic Integration of GaAs . . . and Si Metal-Oxide-Semiconductor Field-Effect Transistors", Appl. Phys. Lett., 48(5), Feb. 3, 1986, pp. 370-371.

Affiliated with

Also associated with

Rating

Method of making monolithic integrated III-V type laser devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making monolithic integrated III-V type laser devices , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making monolithic integrated III-V type laser devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1720713