Ion implantation method for the fabrication of gallium arsenide

Details Ion implantation method for the fabrication of gallium arsenide Ion implantation method for the fabrication of gallium arsenide

1976-05-13

1977-11-15

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21265, H01L 21324

Patent

active

040584135

ABSTRACT:
A method for forming tellurium N-type layers in gallium arsenide by using ion implantation as the doping process and aluminum nitride as a protective overcoat to prevent disassociation of the gallium arsenide during anneal.

REFERENCES:
patent: 3352725 (1967-11-01), Antell
patent: 3462323 (1969-08-01), Groves
patent: 3600218 (1971-08-01), Pennebaker
patent: 3649369 (1972-03-01), Hunsperger et al.
patent: 3717790 (1973-02-01), Dalton et al.
patent: 3880676 (1975-04-01), Douglas et al.
patent: 3984263 (1976-10-01), Asao et al.
Cuomo et al., "Mask Substrate Surface Shield" I.B.M. Tech. Discl. Bull., vol. 15, No. 6, Nov. 1972, pp. 1728-1729.

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