Semiconductor workpiece topography prediction method

Details Semiconductor workpiece topography prediction method Semiconductor workpiece topography prediction method

1991-10-04

1994-04-26

Harvey, Jack B.

Boots, shoes, and leggings

364468, G06F 1560

Patent

active

053072960

ABSTRACT:
A method of predicting the topography of a semiconductor workpiece after a plurality of manufacturing processes, such as etching and film deposition, are carried out on the workpiece includes establishing a desired topography for a semiconductor workpiece after sequential performance of a plurality of processes, such as etching, are carried out on the workpiece; specifying conditions, such as temperature and etchant concentration, for each process; establishing a plurality of points in a grid in a space including the workpiece; identifying the materials comprising the workpiece and the concentration of virtual particles representing the topography of the workpiece before a first process; using the modified diffusion model equation to predict the material and concentration of virtual particles after the completion of the first process in the sequence of processes; recording the material and virtual particle concentration at the completion of the first process as a decimal number including an integer part representing the material and a decimal part representing the concentration of virtual particles; and using the modified diffusion model to predict the materials and concentration of virtual particles after a second process beginning with the materials and virtual particle concentrations from the prediction of the first process.

REFERENCES:
patent: 5031127 (1991-07-01), Fujita et al.
patent: 5067101 (1991-11-01), Kunikiyo et al.
patent: 5070469 (1991-12-01), Kunikiyo et al.
patent: 5086015 (1992-02-01), Itoh et al.
patent: 5097432 (1992-03-01), Harada et al.
Fujinaga et al, "Three-Dimensional Topography Simulation Model Using Diffusion Equation", Technical Digest, International Electron Devices Meeting, Dec. 1988, pp. 332-335.
Robinson et al, "Ion-Beam-Induced Topography and Surface Diffusion", Journal of Vacuum Science Technology, vol. 21, No. 3, 1982, pp. 790-797.

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