Method for the cleaning and direct bonding of solids

Details Method for the cleaning and direct bonding of solids Method for the cleaning and direct bonding of solids

1995-05-18

1999-06-22

Niebling, John F.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438406, 228206, H01L 21304

Patent

active

059151935

ABSTRACT:
Cleaning in periodic acid (H.sub.5 IO.sub.6) aqueous solutions (HI solutions) of particular compositions removes thermally unstable hydrocarbons from the surfaces of semiconductor wafers and enables the direct bonding of semiconductor surfaces such that the bonded interface between these surfaces remains free of bubbles even after heating subsequent to bonding.

REFERENCES:
patent: 3713206 (1973-01-01), Galmiche et al.
patent: 4883215 (1989-11-01), Goesele et al.
patent: 5494856 (1996-02-01), Beaumont et al.
K. Mitani et al., "Causes and Prevention of Temp.-Dependent Bubbles in Silicon Wafer Bonding", Jpn. Journal of Applied Physics, vol. 30 (1991) 615-622.
W. Kern and D.A. Puotinen, "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semicond. Tech." RCA Review vol. 31 (1970) 186-206.
T. Takahagi et al. "The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching", J. Applied Physics vol. 64 (1988) 3516-3521.

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