Method and system for heating semiconductor wafers

Details Method and system for heating semiconductor wafers Method and system for heating semiconductor wafers

1998-08-31

2000-11-28

Jones, Deborah

Coating apparatus

Gas or vapor deposition

Work support

118715, 118728, 118729, 118504, C23C 1600

Patent

active

061520756

ABSTRACT:
The present disclosure relates to a chemical vapor deposition system including a chemical vapor deposition chamber having a wafer position at which a wafer can be placed during chemical wafer deposition processing, and a source of reactive gases for providing reactive gases to the chemical vapor deposition chamber. This system also includes a coherent radiation source for directing a beam of coherent radiation toward the wafer position, and a shield positioned between the coherent radiation source and the wafer position. This shield is adapted to distribute energy from the beam of coherent radiation across the wafer when the wafer is located at the wafer position.

REFERENCES:
patent: 4920918 (1990-05-01), Adams et al.
patent: 5044314 (1991-09-01), McNeilly
patent: 5080039 (1992-01-01), Kanegae et al.
patent: 5748295 (1998-05-01), Farmer
patent: 5759281 (1998-06-01), Gurari et al.
patent: 5916370 (1999-06-01), Chang

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