Method of forming sloped members of N-type polycrystalline silic

Details Method of forming sloped members of N-type polycrystalline silic Method of forming sloped members of N-type polycrystalline silic

1976-09-20

1977-11-15

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Electrical device making

29580, 156628, H01L 750

Patent

active

040578950

ABSTRACT:
A method of forming a conductive member of N-type conductivity polycrystalline silicon on the surface of an insulating substrate with at least one side thereof sloping gradually to the surface of the insulating substrate utilizing the location dependent diffusivity of doping impurities in the polycrystalline silicon formed on the surface of the insulating substrates and also utilizing the etch inhibiting properties of polycrystalline silicon doped with boron impurities.

REFERENCES:
patent: 3892606 (1975-07-01), Chappelow et al.

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