Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1992-02-03
1994-04-26
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257372, 257374, 257659, H01L 2702, H01L 2704, H01L 2504
Patent
active
053069420
ABSTRACT:
A semiconductor layer is disposed on a semiconductor substrate and a first element is formed in a region of the semiconductor layer. A second element is formed in another region of the semiconductor layer. An insulating layer surrounds the perimeter of the first element, for electrically insulating and separating the first element from the second element and the semiconductor substrate. An electrical shield layer surrounds the perimeter of the first element, and is adapted to a reference electric potential applied thereto, for shielding the first element from an electrical fluctuation of the semiconductor substrate caused by the second element. An electrode is provided for applying the reference electric potential to the electrical shield layer.
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Carroll J.
Nippondenso Co. Ltd.
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