Nonlinear optical element and method of using the same

Details Nonlinear optical element and method of using the same Nonlinear optical element and method of using the same

1993-02-12

1994-04-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257184, 257458, 257656, H01L 3300

Patent

active

053069250

ABSTRACT:
According to the present invention, there is provided a nonlinear optical element including a p-i-n type photodiode (i layer is a light absorbing layer) provided with a barrier layer preventing the going-through of a majority carrier. In the nonlinear optical element of the present invention, since the charges are accumulated with the stop of carrier moving, there occur a deformation in energy band and change in internal electric field. Optical bistability can be attained even without an external circuit. Further, with a plurality of incident light, only one element can exhibit optical bistability therefor because there is no need to dispose an external circuit. According to a method of the present invention, it is possible to control bistability for one light by overlapping another light input to a carrier diffusing region generated by the one light.

REFERENCES:
patent: 5229622 (1993-07-01), Cavailles
David A. B. Miller, "The Quantum Well-Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self-Linearized Modulation", IEEE Journal of Quantum Electronics, vol. QE-21, No. 9, Sep. 1985, pp. 1462-1476.

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